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| savantic semiconductor product specification silicon pnp power transistors 2SB1015 d escription with to-220fa package collector power dissipation :p c =25w@t c =25 low collector saturation voltage complement to type 2sd1406 applications for audio frequency power amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current -3 a i b base current -0.5 a t a =25 2.0 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1015 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(br) collector-emitter breakdown voltage i c =-50ma; i b =0 -60 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.7 v v be base-emitter voltage i c =-0.5a ;v ce =-5v -1.0 v i cbo collector cut-off current v cb =-60v; i e =0 -100 a i ebo emitter cut-off current v eb =-7v; i c =0 -100 a h fe-1 dc current gain i c =-0.5a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-3a ; v ce =-5v 20 f t transition frequency i c =-0.5a; v ce =-5v 9 mhz c ob collector output capacitance f=1mhz ; v cb =-10v 150 pf switching times t on trun-on time 0.4 s t s storage time 1.7 s t f fall time r l =15 b ;v cc =-30v i b1 =-i b2 =-0.2a duty cycle c 1% 0.5 s h fe-1 classifications o y 60-120 100-200 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1015 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) savantic semiconductor product specification 4 silicon pnp power transistors 2SB1015 |
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